(continued) r0 npn pnp MPS6512 mps6516 mps6513 mps6517 mps6514 mps6518 mps6515 mps6519 complementary silicon transistors jedec to-92 case data shee t description the central semiconductor MPS6512 series (npn) and mp s6516 series (pnp) types are molded epoxy silicon small signal transistors designed for general-purpose amplifier applications. maximum ratings (t a =25c unless otherwise noted) mps6516 MPS6512 mps6514 mps6517 symbol mps6513 mps6515 mps6518 mps6519 units collector-base voltage v cbo 40 40 40 25 v collector-emitter voltage v ceo 30 25 40 25 v emitter-base voltage v ebo 4.0 v collector current i c 100 ma power dissipation p d 625 mw power dissipation (t c =25c) p d 1.5 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance jc 83.3 c/w thermal resistance ja 200 c/w electrical characteristics (t a =25c unless otherwise noted) mps6516 MPS6512 mps6514 mps6517 mps6513 mps6515 mps6518 mps6519 symbol test conditions min max min max min max min max units i cbo v cb =30v 50 50 50 - na i cbo v cb =20v - - - 50 na bv ceo i c =0.5ma 30 25 40 25 v bv ebo i e =10a 4.0 4.0 4.0 4.0 v v ce(sat) i c =50ma, i b =5.0ma 0.5 0.5 0.5 0.5 v c ob v cb =10v, i e =0, f=100khz 3.5 3.5 4.0 4.0 pf MPS6512 mps6513 mps6514 mps6515 mps6516 mps6517 mps6518 mps6519 symbol test conditions min max min max min max min max h fe v ce =10v, i c =2.0ma 50 100 90 180 150 300 250 500 h fe v ce =10v, i c =100ma 30 60 90 150
MPS6512 series (npn) / mps6516 series (pnp) silicon transistor page 2 of 2 to-92 package - mechanical outline r1 g a b f e i h c d 1 2 3 min max min max a (dia) 0.175 0.205 4.45 5.21 b 0.170 0.210 4.32 5.33 c 0.500 - 12.70 - d 0.016 0.022 0.41 0.56 e f g 0.125 0.165 3.18 4.19 h 0.080 0.105 2.03 2.67 i to-92 (rev: r1) lead code 1. emitter 2. base 3. collector 0.015 0.38 dimensions symbol inches millimeters 0.100 2.54 0.050 1.27
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